TL;DR
Reports indicate Samsung will use TSMC's 3nm process for Nvidia's next-generation custom high-bandwidth memory base dies.
Samsung will employ TSMC's three-nanometre node for manufacturing foundational layers in Nvidia's upcoming custom high-bandwidth memory components, according to recent media reports. This represents the initial collaboration between Samsung and TSMC in the memory production phase.
Nvidia asked Samsung, SK Hynix, and Micron Technology to utilize TSMC methods for specific foundational layers, alongside sixth-generation DRAM components for primary sections. The company explained that this design embeds a proprietary processor within the base layer to unify usage among various hardware providers.
Following an internal evaluation, Samsung agreed to these conditions, though it intends to maintain internal manufacturing for regular memory units and tailored items for other buyers. Furthermore, the firm is considering whether its own fabrication plants might build these foundational layers should orders surpass TSMC's manufacturing limits.
Via reuters.com ↗ · Also from businesstimes.com.sg ↗
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