Micron plans G11 NAND with over 400 layers for 2027

Micron says its next-generation G11 NAND technology will use wafer-on-wafer bonding to exceed 400 layers. The company plans to begin mass production of this technology in the second half of 2027. Micron is skipping its planned G10 generation to move directly to G11, which will be its first 3D NAND.

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The company intends to use hybrid bonding to combine separate wafers for memory cells and peripheral logic. Micron says this approach will double density to 42 Gb/mm² compared to 21 Gb/mm² for the current G9 generation. G11 is targeting I/O speeds of 5,400 MT/s, up from 3,600 MT/s on G9, and expects 25% lower energy transfer per bit.

These figures are development targets rather than specifications for available SSDs. Micron says real-world SSD performance and total drive power consumption will depend on other factors like controllers, firmware, and interfaces. The exact layer count for G11 has not been confirmed, only that it will be more than 400.